The role of oxidation on porous silicon photoluminescence and its excitation

被引：46

作者：

Torchinskaya, TV

Korsunskaya, NE

Khomenkova, LY

Dhumaev, BR

Prokes, SM

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Natl Acad Sci, Inst Semicond Phys, UA-252028 Kiev, Ukraine

[3] Inst Politecn Nacl, ESFM, Mexico City 07738, DF, Mexico

来源：

THIN SOLID FILMS | 2001年 / 381卷 / 01期

关键词：

photoluminescence; porous silicon; nanocrystalline silicon; suboxide;

D O I：

10.1016/S0040-6090(00)01351-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosphere and annealing in dry oxygen has been investigated via photoluminescence (PL), PL excitation (PLE), electron paramagnetic resonance (EPR) and X-ray photoelectron emission spectroscopy (XPS). Results indicate a direct correlation between the suboxide content and the PL intensity, while no correlation was noted between the PL intensity and the concentration of Si dangling bonds (non-radiative recombination centers). These results given further support to a suboxide-related color center as the source of the intense red luminescence. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：88 / 93

页数：6

共 19 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].