Fabrication of ZnS thin films by an improved photochemical deposition method and application to ZnS/SnS heterojunction cells

被引：73

作者：

Miyawaki, Tetsuya ^{[1
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 466855, Japan

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 25期

基金：

日本学术振兴会;

关键词：

photochemical deposition; ZnS; SnS; heterojunction; solar cells;

D O I：

10.1016/j.matlet.2007.03.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnS films were deposited from aqueous solutions containing S2O32- ions and Zn2+ ions by photochemical reactions. S2O32- ions release sulfur in an acidic solution, but if the released sulfur is excess, sulfur colloids are formed. To prevent the colloid formation, Na2SO3 was added for trapping of the excess sulfur. The deposited films were nearly stoichiometric and had photosensitivity. In order to fabricate ZnS/SnS heterojunction cells, ZnS was deposited on p-type SnS thin films deposited by the electrochemical deposition method. In a current-voltage measurement, the heterojunction cells showed rectification properties. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：4683 / 4686

页数：4

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