Preparation of ternary Cd1-xZnxS alloy by photochemical deposition (PCD) and its application to photovoltaic devices

被引：14

作者：

Gunasekaran, M. ^{[1
,3
]}

Ramasamy, P. ^{[2
]}

Ichimura, M. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India

[3] Anna Univ, Dept Phys, Madras 600025, Tamil Nadu, India

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 8 | 2006年 / 3卷 / 08期

基金：

日本学术振兴会;

关键词：

D O I：

10.1002/pssc.200669501

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

p-SnS/n-Cd1-xZnxS heterojunctions were fabricated by using pulsed electrochemical deposition (P-ECD) and photochemical deposition (PCD) methods. CdSO4, ZnSO4 and Na2S2O3 were used for the deposition of Cd1-xZnxS alloys by PCD method on the indium-tin-oxide (ITO) coated glass substrates. The x values in the Cd1-xZnxS were varied by changing the Na2S2O3 concentration in the deposition bath. SnS layer was deposited by P-ECD using SnSO4 and Na2S2O3. The composition details of the n-Cd1-xZnxS window layer were estimated from LO (longitudinal optical) phonon frequency observed from the Raman studies. The photovoltaic properties of the fabricated solar cell structure glass/ITO/ Cd1-xZnxS /SnS/In are characterised under the photon intensity 100 mW/cm(2) and we observed the short circuit current density as 4.8 mA/cm(2), open circuit voltage as 280 mV and fill factor as 0.34. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2656 / +

页数：3

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