Low-loss optical planar waveguides in YVO4 produced by silicon ion implantation at low doses

被引:23
作者
Chen, F [1 ]
Wang, XL
Li, SL
Fu, G
Wang, KM
Lu, QM
Shen, DY
Nie, R
Ma, HJ
机构
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[3] Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Peoples R China
[4] Peking Univ, Dept Tech Phys, Beijing 100871, Peoples R China
[5] Peking Univ, Minist Educ China, Key Lab Heavy Ion Phys, Beijing 100871, Peoples R China
关键词
D O I
10.1063/1.1604965
中图分类号
O59 [应用物理学];
学科分类号
摘要
Planar waveguides in x-cut YVO4 crystals were produced by ion-implanted Si+ ions with energies from 2.6 to 3.0 MeV at doses of 1x10(13)-1.5x10(14) ions/cm(2). The number of propagation modes varied from 1 to 3 as the doses of the implanted ions increased. The effective refractive indices of all the observed waveguide modes were higher than the refractive index of the substrate, which meant an index-enhanced guiding layer with thickness of similar to2 mum formed to confine the light propagation. The minimum propagation loss of the measured YVO4 waveguide was 0.27 dB/cm after annealing under suitable conditions. (C) 2003 American Institute of Physics.
引用
收藏
页码:4708 / 4710
页数:3
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