ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

被引：45

作者：

Hillie, KT

Curren, C

Swart, HC

机构：

[1] Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa

[2] Natl Accelerator Ctr, ZA-7131 Faure, South Africa

来源：

APPLIED SURFACE SCIENCE | 2001年 / 177卷 / 1-2期

基金：

新加坡国家研究基金会;

关键词：

pulsed laser deposition; Zn based phosphors; Auger electron spectroscopy;

D O I：

10.1016/S0169-4332(01)00206-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of ZnS based phosphor thin films on a Si(100) substrate using pulsed XeCl (308 nm) laser deposition (PLD) for cathodoluminescene (CL) studies was investigated. Ultra high vacuum Auger electron spectroscopy (AES) was utilised to determine the surface composition of the thin films. X-ray diffraction (XRD) measurements revealed that (100) ZnS films have been preferentially grown on a Si(100) substrate. The Rutherford back scattering (RBS) results show that the growth rate, increased with an increase of the N-2 pressure in the deposition chamber during deposition. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：73 / 77

页数：5

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