Dirac particles in epitaxial graphene films grown on SiC

被引：25

作者：

Berger, Claire ^{[1
]}

Wu, Xiaosong ^{[1
]}

First, Phillip N. ^{[1
]}

Conrad, Edward H. ^{[1
]}

Li, Xuebin ^{[1
]}

Sprinkle, Michael ^{[1
]}

Hass, Joanna ^{[1
]}

Varchon, Francois ^{[2
]}

Magaud, Laurence ^{[2
]}

Sadowski, Marcin L. ^{[2
]}

Potemski, Marek ^{[2
]}

Martinez, Gerard ^{[2
]}

de Heer, Walt A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30328 USA

[2] CNRS, Inst Neel, F-38042 Grenoble, France

来源：

ADVANCES IN SOLID STATE PHYSICS | 2008年 / 47卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1007/978-3-540-74325-5_12

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the transport and structural properties of graphene layers grown epitaxially on hexagonal SiC. Experimentally, the charge carriers in epitaxial graphene are found to be chiral and the band structure is clearly related to the Dirac cone. To lowest order, epitaxial graphene appears to consist of stacked graphene sheets; the first layer is highly charged with the others carrying much lower charge.

引用

页码：145 / +

页数：3

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