Current transport mechanisms in n-type amorphous silicon-carbon on p-type crystalline silicon (a-Si0.8C0.2:H/c-Si) heterojunction diodes

被引:11
作者
Marsal, LF
Pallares, J
Correig, X
Orpella, A
Bardes, D
Alcubilla, R
机构
[1] Univ Rovira & Virgili, Dept Elect Engn, Tarragona 43006, Spain
[2] Univ Politecn Catalunya, Dept Elect Engn, Barcelona 08071, Spain
关键词
D O I
10.1088/0268-1242/13/10/016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
N-type amorphous silicon-carbon on p-type crystalline silicon heterojunction diodes have been fabricated and electrically characterized. The a-Si0.8C0.2:H film was deposited by plasma-enhanced chemical vapour deposition. The electrical properties were investigated by capacitance-voltage and current-voltage measurements at different temperatures. Current-voltage characteristics present good rectifying properties, 60 000:1 at +/-0.5 V at room temperature. The analysis of current-voltage characteristics at different temperatures indicates that the current is dominated by recombination at the A-Si0.8Co0.2:H side of the space charge region in forward bias. The reverse characteristics show a leakage current which increases exponentially with the applied voltage. Finally, numerical simulations are presented which explain the experimental results throughout the temperature range.
引用
收藏
页码:1148 / 1153
页数:6
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