THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS

被引：35

作者：

DEMICHELIS, F

CROVINI, G

PIRRI, CF

TRESSO, E

GALLONI, R

RIZZOLI, R

SUMMONTE, C

ZIGNANI, F

RAVA, P

MADAN, A

机构：

[1] CNR, IST CHIM & TECNOL MAT & COMPONENTE ELETTR LAMEL, BOLOGNA, ITALY

[2] FAC INGN BOLOGNA, DIPARTIMENTO CHIM APPL & SCI MAT, BOLOGNA, ITALY

[3] ELETTRORAVA, TURIN, ITALY

[4] MV SYST INC, GOLDEN, CO 80401 USA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 69卷 / 02期

关键词：

D O I：

10.1080/01418639408240116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous silicon carbide films were deposited by the plasma-enhanced chemical vapour deposition technique in SiH4-CH4-H-2 gas mixtures and the effect of hydrogen dilution on the optoelectronic properties investigated using photothermal deflection spectroscopy, photoconductivity and dark electrical conductivity, photoluminescence and Fourier transform infrared spectroscopy. Large H-2 dilution leads to materials of improved quality whose E(g) is about 2.0 eV. The materials were also incorporated into a solar cell device structure to confirm our conclusions.

引用

页码：377 / 386

页数：10

共 17 条

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AMER M, 1981, SEMICONDUCT SEMIMET, V21, P83

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