The doping of GaN with Mg diffusion

被引：56

作者：

Pan, CJ ^{[1
]}

Chi, GC ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Phys, Chungli 32054, Taiwan

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(98)00289-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of GaN films diffused with Mg were studied. The undoped GaN films were grown by metalorganic chemical vapor deposition (MOCVD). The photoluminescence (PL) spectra of Mg diffused GaN showed a broad violet emission. The Mg-diffused GaN was p-type conductivity with a mobility of 13 cm(2)/V-s and a hole concentration of 3 x 10(15)/cm(3) at a diffusion temperature of 1100 degrees C. However, the samples, which were diffused at 1100 degrees C, showed a red emission peak after the annealing process. From the diffusion depth profile observed by secondary ion mass spectrometry (SIMS), we obtained the activation energy of 1.3 eV for Mg diffusion in GaN. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

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页码：621 / 623

页数：3

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