Surface plasmons at MOCVD-grown GaN(000(1)over-bar)

被引:13
作者
Polyakov, VM
Tautz, FS
Sloboshanin, S
Schaefer, JA
Usikov, AS
Ber, BJ
机构
[1] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1088/0268-1242/13/12/011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on the first observation of surface plasmons at a GaN surface by high-resolution electron energy loss (HREEL) spectroscopy. Dipole scattering theory using self-consistent electron density profiles is employed to calculate the surface energy loss function and hence the expected energy loss spectra. The characteristic features of both the surface plasmons and the Fuchs-Kliewer (FK) surface optical phonons are well reproduced in the framework of this model. Fitting measured HREEL spectra allows us to give estimates of important semiconductor parameters such as electron density, electron mobility and band bending. Moreover, it is found that the plasmon damping strongly depends on primary beam energy. Similarly, the FK phonon damping and frequency are also affected by the variation of primary beam energy.
引用
收藏
页码:1396 / 1400
页数:5
相关论文
共 27 条
[1]   Collective surface excitations in 3C-SiC(100) [J].
Balster, T ;
Polyakov, VM ;
Tautz, FS ;
Ibach, H ;
Schaefer, JA .
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :347-350
[2]   INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].
BARKER, AS ;
ILEGEMS, M .
PHYSICAL REVIEW B, 1973, 7 (02) :743-750
[3]   Study of oxygen chemisorption on the GaN(0001)-(1x1) surface [J].
Bermudez, VM .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1190-1200
[4]   Surface reconstruction of zinc-blende GaN [J].
Bykhovski, AD ;
Shur, MS .
APPLIED PHYSICS LETTERS, 1996, 69 (16) :2397-2399
[5]   Surface and bulk electronic structure of thin-film wurtzite GaN [J].
Dhesi, SS ;
Stagarescu, CB ;
Smith, KE ;
Doppalapudi, D ;
Singh, R ;
Moustakas, TD .
PHYSICAL REVIEW B, 1997, 56 (16) :10271-10275
[6]   Growth of GaN films on CoGa(001): An EELS and AES study [J].
Gassmann, P ;
Schmitz, G ;
Franchy, R .
SURFACE SCIENCE, 1997, 380 (01) :L459-L462
[7]  
Gotz W, 1996, APPL PHYS LETT, V68, P3144, DOI 10.1063/1.115805
[8]   Vibrational properties of GaN(0001) surfaces [J].
Grabowski, SP ;
Kampen, TU ;
Nienhaus, H ;
Monch, W .
APPLIED SURFACE SCIENCE, 1998, 123 :33-37
[9]   MOLECULAR-BEAM-EPITAXY GROWTH OF GAN ON GAAS(100) BY USING REACTIVE NITROGEN-SOURCE [J].
HE, ZQ ;
DING, XM ;
HOU, XY ;
WANG, X .
APPLIED PHYSICS LETTERS, 1994, 64 (03) :315-317
[10]  
Ibach H., 1982, ELECT ENERGY LOSS SP