Arsenic diffusion in relaxed Si1-xGex -: art. no. 155209

The intrinsic As diffusion properties have been determined in relaxed Si1-xGex epilayers. The properties were studied as a function of composition x for the full range of materials with x=0, 0.20, 0.35, 0.50, 0.65, 0.8, and 1. The activation enthalpy E-a was found to drop systematically from 3.8 eV (x=0) to 2.4 eV (x=1). Comparisons with other impurity atom- and self-diffusion results in Si, Ge, and SiGe show that both interstitials and vacancies contribute as diffusion vehicles in the composition range 0less than or equal toxless than or equal to0.35 and that vacancy mechanism dominates diffusion in the composition range 0.35<xless than or equal to1.