Pressure and alloy-composition dependence of Al/Ga1-xAlxAs(100) Schottky barriers

被引：14

作者：

Bardi, J

Binggeli, N

Baldereschi, A

机构：

[1] Institut de Physique Appliquée, Ecole Polytechnique Fédérale de Lausanne

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.54.R11102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence on hydrostatic pressure and alloy composition of the Schottky-barrier height at ideal, defect-free, Al/Ga1-xAlxAs (100) junctions is investigated by means of an ab initio pseudopotential approach. The results reproduce closely the experimental data and, in contrast to recent proposals, demonstrate that the barrier heights can be explained without invoking interface defects. The alloy-composition dependence is understood by extending to metal/semiconductor contacts the linear-response-theory approach currently used for semiconductor heterojunctions. The pressure variation of the barriers can be obtained from the Ga1-xAlxAs band-edge deformation potentials.

引用

页码：11102 / 11105

页数：4

共 32 条

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