Hydrogen sensing characteristics of Pd-SiC Schottky diode operating at high temperature

被引：27

作者：

Kim, CK ^{[1
]}

Lee, JH

Lee, YH

Cho, NI

Kim, DJ

Kang, WP

机构：

[1] Soonchunhyang Univ, Dept Elect Engn, Asan 336745, Choongnam, South Korea

[2] Sun Moon Univ, Dept Elect Engn, Asan 336840, Choongnam, South Korea

[3] Seoul Natl Univ, Dept Inorgan Mat Engn, Seoul 151742, South Korea

[4] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 03期

关键词：

adsorption; gas sensor; hydrogen; Pd; Schottky diode; SiC;

D O I：

10.1007/s11664-999-0014-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was fabricated. Hydrogen-sensing behaviors of Pd-SiC Schottky diode have been analyzed as a function of hydrogen concentration and temperature by current-voltage (I-V) and Delta I-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

引用

页码：202 / 205

页数：4

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