A NEW HYDROGEN SENSOR USING A POLYCRYSTALLINE DIAMOND-BASED SCHOTTKY DIODE

被引：49

作者：

KANG, WP

GURBUZ, Y

DAVIDSON, JL

KERNS, DV

机构：

[1] Department of Applied and Engineering Sciences, Vanderbilt University, Nashville

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 08期

关键词：

D O I：

10.1149/1.2055094

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new hydrogen sensor utilizing plasma-enhanced chemical vapor deposited diamond in conjunction with palladium (Pd) metal has been developed. The device is fabricated in a layered Pd/undoped diamond/p-doped diamond Schottky diode configuration. Hydrogen sensing characteristics of the device have been examined in terms of sensitivity, linearity, response rate, and response time as a function of temperature and hydrogen partial pressure. Hydrogen adsorption activation energy is investigated in the temperature range from 27 to 85-degrees-C. Analysis of the steady-state reaction kinetics using the I-V method confirm that the hydrogen adsorption process is responsible for the barrier height change in the diamond Schottky diode. The ability to fabricate diamond-based hydrogen sensor on a variety of substrates makes the device very versatile for gas sensing.

引用

页码：2231 / 2234

页数：4

共 12 条

[1]

DAVIDSON JL, 1993, 3RD P INT S DIAM MAT, P419

[2] THE BARRIER HEIGHT OF SCHOTTKY DIODES WITH A CHEMICAL-VAPOR-DEPOSITED DIAMOND BASE [J].