State of the art 6" SI GaAs wafers made of conventionally grown LEC-crystals

被引：16

作者：

Flade, T ^{[1
]}

Jurisch, M ^{[1
]}

Kleinwechter, A ^{[1
]}

Köhler, A ^{[1
]}

Kretzer, U ^{[1
]}

Prause, J ^{[1
]}

Reinhold, T ^{[1
]}

Weinert, B ^{[1
]}

机构：

[1] Freiberger Compound Mat GmbH, D-09599 Freiberg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 198卷

关键词：

LEC; semi-insulating GaAs; carbon control; homogeneity;

D O I：

10.1016/S0022-0248(98)01072-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

6" SI GaAs single crystals are grown by the standard LEG-process in a new-generation multi-heater puller designed for charges up to 50 kg and crucibles up to 12", applying the carbon controlled growth technology. It is demonstrated that the increasing requirements of device manufacturers with regard to macroscopic and mesoscopic homogeneity of electrical properties, mechanical strength, flatness and cleanliness of the wafers can be fully met by LEC grown 6" crystals. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：336 / 342

页数：7

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