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Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors
被引:318
作者:
Kocabas, C
Hur, SH
Gaur, A
Meitl, MA
Shim, M
Rogers, JA
[1
]
机构:
[1] Beckman Inst, Urbana, IL USA
[2] Frederick Seitz Mat Res Lab, Urbana, IL USA
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[4] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[5] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[6] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
来源:
关键词:
nanostructures;
nanotechnology;
nanotubes;
surface chemistry;
transistors;
D O I:
10.1002/smll.200500120
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A convenient process for generating large-scale, horizontally aligned arrays of pristine, single-walled carbon nanotubes (SWNTs) is described. The approach uses guided growth, by chemical vapor deposition (CVD), of SWNTs on miscut single-crystal quartz substrates. Studies of the growth reveal important relationships between the density and alignment of the tubes, the CVD conditions, and the morphology of the quartz. Electrodes and dielectrics patterned on top of these arrays yield thin-film transistors that use the SWNTs as effective thin-film semiconductors. The ability to build high-performance devices of this type suggests significant promise for large-scale aligned arrays of SWNTs in electronics, sensors, and other applications.
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页码:1110 / 1116
页数:7
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