p-channel, n-channel thin film transistors and p-n diodes based on single wall carbon nanotube networks

被引:264
作者
Zhou, YX
Gaur, A
Hur, SH
Kocabas, C
Meitl, MA
Shim, M
Rogers, JA [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Beckman Inst, Dept Phys,Dept Chem, Urbana, IL 61801 USA
关键词
D O I
10.1021/nl048905o
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper demonstrates the use of arrays of networks of single wall carbon nanotubes (SWNTs) and electrical breakdown procedures for building thin film transistors (TFTs) that have good, reproducible performance and high current output. Channel length scaling analysis of these TFTs indicates that the resistance at the source/drain contacts is a small fraction of the device resistance, in the linear regime. When measured with the channel exposed to air or coated by poly(methyl methacrylate) (PMMA), these transistors operate in the unipolar p mode. By spin-coating the polymer polyethylenimine (PEI) on the channel region, these transistors can be switched to operate in the unipolar n mode. Patterning the exposure of a single channel to PMMA and PEI yields p-n diodes. These results indicate that SWNT-TFTs can provide the building blocks of complex complementary circuits for a range of applications in macroelectronics, sensors, and other systems.
引用
收藏
页码:2031 / 2035
页数:5
相关论文
共 29 条
  • [1] Subband population in a single-wall carbon nanotube diode
    Antonov, RD
    Johnson, AT
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (16) : 3274 - 3276
  • [2] Logic circuits with carbon nanotube transistors
    Bachtold, A
    Hadley, P
    Nakanishi, T
    Dekker, C
    [J]. SCIENCE, 2001, 294 (5545) : 1317 - 1320
  • [3] Pentacene-based radio-frequency identification circuitry
    Baude, PF
    Ender, DA
    Haase, MA
    Kelley, TW
    Muyres, DV
    Theiss, SD
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3964 - 3966
  • [4] Engineering carbon nanotubes and nanotube circuits using electrical breakdown
    Collins, PC
    Arnold, MS
    Avouris, P
    [J]. SCIENCE, 2001, 292 (5517) : 706 - 709
  • [5] Dresselhaus MS, 2001, CARBON NANOTUBES SYN
  • [6] MEASUREMENT OF THE CONDUCTIVITY EXPONENT IN TWO-DIMENSIONAL PERCOLATING NETWWORKS - SQUARE LATTICE VERSUS RANDOM-VOID CONTINUUM
    DUBSON, MA
    GARLAND, JC
    [J]. PHYSICAL REVIEW B, 1985, 32 (11): : 7621 - 7623
  • [7] Extraordinary mobility in semiconducting carbon nanotubes
    Durkop, T
    Getty, SA
    Cobas, E
    Fuhrer, MS
    [J]. NANO LETTERS, 2004, 4 (01) : 35 - 39
  • [8] HIGHLY EFFICIENT ALGORITHM FOR PERCOLATIVE TRANSPORT STUDIES IN 2 DIMENSIONS
    FRANK, DJ
    LOBB, CJ
    [J]. PHYSICAL REVIEW B, 1988, 37 (01): : 302 - 307
  • [9] Controlled creation of a carbon nanotube diode by a scanned gate
    Freitag, M
    Radosavljevic, M
    Zhou, YX
    Johnson, AT
    Smith, WF
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3326 - 3328
  • [10] Crossed nanotube junctions
    Fuhrer, MS
    Nygård, J
    Shih, L
    Forero, M
    Yoon, YG
    Mazzoni, MSC
    Choi, HJ
    Ihm, J
    Louie, SG
    Zettl, A
    McEuen, PL
    [J]. SCIENCE, 2000, 288 (5465) : 494 - 497