Interdependence of strain and shape in self-assembled coherent InAs islands on GaAs

被引：52

作者：

Kegel, I

Metzger, TH

Fratzl, P

Peisl, J

Lorke, A

Garcia, JM

Petroff, PM

机构：

[1] Univ Munich, Sekt Phys, D-80539 Munich, Germany

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Austrian Acad Sci, Erich Schmid Inst Festkorperphys, A-8700 Leoben, Austria

来源：

EUROPHYSICS LETTERS | 1999年 / 45卷 / 02期

关键词：

D O I：

10.1209/epl/i1999-00150-y

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Self-assembled coherent InAs islands on GaAs (100) have been investigated by a novel version of gracing-incidence diffraction ("iso-strain scattering"). This method permits the determination of the interdependence of strain and shape, as well as the relaxation gradient within the InAs dots. The relaxation in the islands ranges from fully strained at the bottom to completely relaxed at the top of the islands. The radius of the dots at a given height depends linearly on the local elastic lattice relaxation, with a rapidly increasing relaxation gradient when approaching the top of the islands.

引用

收藏

页码：222 / 227

页数：6

相关论文

共 17 条

[1] Structural transition in large-lattice-mismatch heteroepitaxy [J].

Chen, Y ;

Washburn, J .

PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4046-4049

[2] High-resolution x-ray diffraction from multilayered self-assembled Ge dots [J].

Darhuber, AA ;

Schittenhelm, P ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Abstreiter, G .

PHYSICAL REVIEW B, 1997, 55 (23) :15652-15663

[3] Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction [J].

Darhuber, AA ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Krost, A ;

Heinrichsdorff, F ;

Grundmann, M ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Kosogov, AO ;

Werner, P .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :955-957

[4] Mean-field theory of quantum dot formation [J].

Dobbs, HT ;

Vvedensky, DD ;

Zangwill, A ;

Johansson, J ;

Carlsson, N ;

Seifert, W .

PHYSICAL REVIEW LETTERS, 1997, 79 (05) :897-900

[5] Red-emitting semiconductor quantum dot lasers [J].

Fafard, S ;

Hinzer, K ;

Raymond, S ;

Dion, M ;

McCaffrey, J ;

Feng, Y ;

Charbonneau, S .

SCIENCE, 1996, 274 (5291) :1350-1353

[6] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[7] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].

GRUNDMANN, M ;

STIER, O ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981

[8] Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study [J].

Jiang, HT ;

Singh, J .

PHYSICAL REVIEW B, 1997, 56 (08) :4696-4701

[9] Mechanics of coherent and dislocated island morphologies in strained epitaxial material systems [J].

Johnson, HT ;

Freund, LB .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6081-6090

[10]

KEGEL I, UNPUB PHYS REV B