SiC fabrication technology: Growth and doping

被引：19

作者：

Dmitriev, VA

Spencer, MG

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Howard Univ, Mat Sci Res Ctr Excellence, Sch Engn, Washington, DC 20059 USA

来源：

SIC MATERIALS AND DEVICES | 1998年 / 52卷

关键词：

D O I：

10.1016/S0080-8784(08)62844-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：21 / 75

页数：55

共 231 条

[1]

ACHESON AG, 1963, PHILIPS RES REP, V18, P161

[2] BORON AND ALUMINUM IMPLANTATION IN ALPHA-SIC [J].

AHMED, S ;

BARBERO, CJ ;

SIGMON, TW ;

ERICKSON, JW .

APPLIED PHYSICS LETTERS, 1994, 65 (01) :67-69

[3] ACTIVATION OF ION-IMPLANTED DOPANTS IN ALPHA-SIC [J].

AHMED, S ;

BARBERO, CJ ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1995, 66 (06) :712-714

[4] EMPIRICAL DEPTH PROFILE SIMULATOR FOR ION-IMPLANTATION IN 6H-ALPHA-SIC [J].

AHMED, S ;

BARBERO, CJ ;

SIGMON, TW ;

ERICKSON, JW .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) :6194-6200

[5] EQUILIBRIUM PREDICTIONS OF THE ROLE OF ORGANOSILICON COMPOUNDS IN THE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE [J].

ALLENDORF, MD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) :747-753

[6]

ALOK D, 1995, HIGH VOLTAGE 450 V 6, P749

[7]

ANIKIN MM, 1984, PISMA ZH TEKH FIZ+, V10, P1053

[8]

ANIKIN MM, 1993, SEMICONDUCTOR INTERF, P280

[9]

BAKIN AS, 1995, HIGH RESOLUTION XRD, P433

[10]

BARASH AS, 1988, PISMA ZH TEKH FIZ+, V14, P2222

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