Structural and optical properties of thick freestanding GaN templates

被引:45
作者
Freitas, JA
Braga, GCB
Moore, WJ
Tischler, JG
Culbertson, JC
Fatemi, M
Park, SS
Lee, SK
Park, Y
机构
[1] USN, Res Lab, Elect Mat Branch, Washington, DC 20375 USA
[2] Univ Brasilia, Inst Phys, BR-70000 Brasilia, DF, Brazil
[3] SFA Inc, Largo, MD 20744 USA
[4] Samsung SAIT, Suwon 440600, South Korea
关键词
absorption; atomic force microscopy; photoluminescence; Raman; X-ray diffraction; hydride vapor phase epitaxy; semiconducting gallium compounds;
D O I
10.1016/S0022-0248(01)01456-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Structural and optical properties of thick (larger than 160 mum) freestanding hydride vapor phase epitaxy GaN templates have been investigated. AFM measurements showed that flat and smooth surface could be fabricated. High-resolution X-ray diffraction studies carried out with different spectrometer slit for the symmetric and asymmetric diffractions show that the linewidth increases with increasing slits width. indicating that a considerable degree of tilting and twisting of the individual grains are still present in these thick samples. Raman scattering measurements performed in a few samples indicate good crystalline quality and reduced strain. Very sharp and intense exciton related lines (FWHM less than I meV) have been observed in the low temperature photoluminescence spectra. Variable-temperature photoluminescence experiments were performed on both the growth surface and interface to identify the nature of the recombination processes observed in the luminescence spectra. FTIR absorption measurements show the presence of at least two donors with binding energy of 30.5 and 33.6 meV. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:322 / 328
页数:7
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