Diamond based light-emitting diode for visible single-photon emission at room temperature

被引：86

作者：

Lohrmann, A. ^{[1
]}

Pezzagna, S. ^{[1
]}

Dobrinets, I. ^{[1
]}

Spinicelli, P. ^{[2
,3
]}

Jacques, V. ^{[2
,3
]}

Roch, J. -F. ^{[1
,2
,3
]}

Meijer, J. ^{[1
]}

Zaitsev, A. M. ^{[1
,4
,5
]}

机构：

[1] Ruhr Univ Bochum, RUBION, D-44780 Bochum, Germany

[2] ENS Cachan, Lab Photon Quant & Mol, F-94235 Cachan, France

[3] CNRS, UMR 8537, F-94235 Cachan, France

[4] CUNY, Coll Staten Isl, Staten Isl, NY 10314 USA

[5] CUNY, Grad Ctr, Staten Isl, NY 10314 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 25期

关键词：

D O I：

10.1063/1.3670332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 degrees C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670332]

引用

页数：4

共 19 条

[1] Diamond-based single-photon emitters [J].