High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

被引：62

作者：

Ding, SJ ^{[1
]}

Hu, H

Lim, HF

Kim, SJ

Yu, XF

Zhu, CX

Li, MF

Cho, BJ

Chan, DSH

Rustagi, SC

Yu, MB

Chin, A

Kwong, DL

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[4] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 12期

关键词：

atomic layer deposition (ALD); HfO2-Al2O3; laminate; high-k; metal-insulator-metal (MIM) capacitor;

D O I：

10.1109/LED.2003.820664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications.

引用

页码：730 / 732

页数：3

共 12 条

[11] High-κ gate dielectrics:: Current status and materials properties considerations [J].