A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

被引：131

作者：

Yu, XF ^{[1
]}

Zhu, CX

Hu, H

Chin, A

Li, MF

Cho, BJ

Kwong, DL

Foo, PD

Yu, MB

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30050, Taiwan

[3] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78752 USA

[4] Inst Microelect, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期

关键词：

frequency dependency; high capacitance density; metal-insulator-metal (MIM) capacitor; thin-film devices; voltage coefficient of capacitance (VCC);

D O I：

10.1109/LED.2002.808159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness Of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/mum(2) and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 x 10-(8)A/cm(2) at room temperature at I V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.

引用

页码：63 / 65

页数：3

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