Electroluminescence of diamond films induced by a scanning tunneling microscope

被引:7
作者
Dong, ZC
Trifonov, AS
Suetin, NV
Minakov, PV
机构
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
[2] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119882, Russia
关键词
electroluminescence; field emission; scanning tunneling microscopy; scanning tunneling spectroscopies; diamond; polycrystalline thin films;
D O I
10.1016/j.susc.2003.12.004
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the scanning tunneling microscope induced band-A emission from boron-doped polycrystalline diamond films fabricated by chemical-vapor deposition (CVD). The broad blue emission occurs at a bias above +/-3.4 V with double peaks at 410 and 450 nm and is attributed to the dislocation-related defect centers. Greatly enhanced green emissions around 530 nm are observed at high positive bias. This, together with strongly bias- and polarity-dependent emission intensities and spectra, leads us to propose that the boost in the green emission at high bias is probably related to the minority electron injection into the boron-related acceptor states in the subsurface. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:203 / 210
页数:8
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