Observation of silicon surfaces using ultrahigh vacuum noncontact atomic force microscope

被引:13
作者
Kitamura, S [1 ]
Suzuki, K [1 ]
Iwatsuki, M [1 ]
机构
[1] Jeol Ltd, Akishima, Tokyo 196, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 6B期
关键词
AFM; STM; SKPM; CPD; noncontact; Si(111)7x7; Si(100)2x1; FM detection; force gradient;
D O I
10.1143/JJAP.37.3765
中图分类号
O59 [应用物理学];
学科分类号
摘要
The advantage of noncontact atomic force microscope (NC-AFM) is, that the interaction between the tip and the sample is reduced as compared with the other AFM techniques. Furthermore, in the ultrahigh vacuum (UHV) NC-AFM, the atomic resolution images can be obtained, as the capillary forces between the cantilever tip and the sample are eliminated. A UHV NC-AFM with a unique frequency modulation (FM) technique has been developed. We have obtained atomic resolution images of the Si(111) 7x7, Si(100) 2x1 structures and oxygen adsorption Si(111)7x7 surface along with the scanning tunneling microscope (STM) images. Using a similar technology, a UHV scanning Kelvin probe microscope (SKPM) utilizing the gradient of electrostatic force has also been developed. In the SKPM it is possible to simultaneously observe the contact potential difference (CPD) and the NC-AFM topographic images. The CPD image of Si(111) surface with deposited Au clearly shows the potential difference between the 7x7 and the 5x2 phases. A high resolution image of the Ag-deposited Si(111) 7x7 surface is obtained by simultaneous observation of the CPD and the NC-AFM topographic images.
引用
收藏
页码:3765 / 3768
页数:4
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