Electronic structure and fermi surface of Bi(100)

被引:56
作者
Hofmann, P [1 ]
Gayone, JE
Bihlmayer, G
Koroteev, YM
Chulkov, EV
机构
[1] Aarhus Univ, Inst Storage Ring Facil, DK-8000 Aarhus, Denmark
[2] Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[3] Consejo Nacl Invest Cient & Tecn, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[4] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[5] DIPC, San Sebastian 20018, Basque Country, Spain
[6] Russian Acad Med Sci, Inst Strength Phys & Mat Sci, Tomsk 634021, Russia
[7] Univ Basque Country, Fac Ciencias Quim, CSIC, Dept Fis Mat, San Sebastian 20080, Basque Country, Spain
[8] Univ Basque Country, Fac Ciencias Quim, CSIC, Ctr Mixto, San Sebastian 20080, Basque Country, Spain
关键词
D O I
10.1103/PhysRevB.71.195413
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface electronic structure of 13000) was studied by angle-resolved photoemission and the full-potential linearized-augmented plane-wave film method. Experimentally, several electronic surface states were identified in the gaps of the projected-bulk band structure close to the Fermi level. Theory shows that these states belong to a spin-orbit split-surface band that extends through the whole Brillouin zone, and that some surface states penetrate very deeply into the bulk. In the experiment, the surface Fermi surface was found to consist of three features: an electron pocket at the (Gamma) over bar point, a hole pocket in the (Gamma) over bar-(M) over bar direction (i.e., in the direction of the surface-mirror line), and a small Fermi-surface element close to the (M) over bar' points.
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