Photoemission study of the carrier bands in Bi(111)

被引：43

作者：

Hengsberger, M ^{[1
]}

Segovia, P ^{[1
]}

Garnier, M ^{[1
]}

Purdie, D ^{[1
]}

Baer, Y ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland

来源：

EUROPEAN PHYSICAL JOURNAL B | 2000年 / 17卷 / 04期

关键词：

D O I：

10.1007/s100510070097

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present high-resolution photoemission data from the Bi(111)-surface. The electronic structure of the semimetal close to the Fermi level has been found to change dramatically with respect to the well established bulk band structure. The Fermi surfaces observed for the electron and hole bands resemble those of the next group-V element, antimony, probably as a consequence of surface relaxation. This results in a relatively high surface charge density. The observed temperature dependence of the electron Fermi energy confirms this result.

引用

页码：603 / 608

页数：6

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