Electric properties of RF-MBE InGaAsN grown layer

被引:8
作者
Suzuki, T [1 ]
Yamaguchi, T [1 ]
Yamamoto, A [1 ]
Hashimoto, A [1 ]
机构
[1] Univ Fukui, Dept Elect & Elect Engn, Fukui 9108507, Japan
来源
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期
关键词
D O I
10.1002/pssc.200303560
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have investigated the Hall electron mobility of GaAsN and the InGaAsN as a function of temperature. The temperature dependence of the electron mobility for the GaAsN system cannot be explained by the alloy and the ionized impurity scattering mechanisms, and the experimental data indicate that unknown scattering mechanisms may be induced by the N incorporation. On the other hand, the temperature dependence for the InGaAsN system shows that the electron mobility improves in the low temperature range in contrast to the case of the GaAsN system. Moreover, the degradation of the mobility induced by the N incorporation is suppressed by the In incorporation, and the alloy scattering becomes dominant as the scattering mechanism in the InGaAsN system. The results strongly suggest that the scattering origin induced by the N incorporation for the GaAsN system may be related with the inhomogeneous N distribution and that the inhomogeneity may be suppressed by the In incorporation. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2769 / 2772
页数:4
相关论文
共 6 条
[1]   1-eV solar cells with GaInNAs active layer [J].
Friedman, DJ ;
Geisz, JF ;
Kurtz, SR ;
Olson, JM .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :409-415
[2]   Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates [J].
Hashimoto, A ;
Kitano, T ;
Nguyen, AK ;
Masuda, A ;
Yamamoto, A ;
Tanaka, S ;
Takahashi, M ;
Moto, A ;
Tanabe, T ;
Takagishi, S .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (1-2) :313-317
[3]   Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy [J].
Kurtz, SR ;
Klem, JF ;
Allerman, AA ;
Sieg, RM ;
Seager, CH ;
Jones, ED .
APPLIED PHYSICS LETTERS, 2002, 80 (08) :1379-1381
[4]   InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs [J].
Kurtz, SR ;
Allerman, AA ;
Jones, ED ;
Gee, JM ;
Banas, JJ ;
Hammons, BE .
APPLIED PHYSICS LETTERS, 1999, 74 (05) :729-731
[5]  
MAKOWSKI, 1973, J PHYS SOC JPN, V41, P487
[6]  
UCHIDA M, 2003, 15 INT C NITR SEM IC