Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

被引：82

作者：

Kurtz, SR ^{[1
]}

Klem, JF ^{[1
]}

Allerman, AA ^{[1
]}

Sieg, RM ^{[1
]}

Seager, CH ^{[1
]}

Jones, ED ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1453480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (much greater thanmean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect. (C) 2002 American Institute of Physics.

引用

页码：1379 / 1381

页数：3

共 16 条

[1] Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy [J].