Instability of amorphous Ru-Si-O thin films under thermal oxidation

被引：9

作者：

Gasser, SM ^{[1
]}

Ruiz, R ^{[1
]}

Kolawa, E ^{[1
]}

Nicolet, MA ^{[1
]}

机构：

[1] CALTECH, Pasadena, CA 91125 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 04期

关键词：

D O I：

10.1149/1.1391802

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ternary films about 200 nm thick of composition Ru20Si15O65 have been synthesized by reactive rf magnetron sputtering of a Ru,Sit target in an argon-oxygen gas. As-deposited, the films are X-ray-amorphous. Their atomic density is 8.9 X 10(22)/cm(3) (5.1 g/cm(3)), and their electrical resistivity is in the range of 2 m Ohm cm. After annealing in dry oxygen at 600 degrees C for 30 min, micron-sized grains of RuO2 grow out of the film and volatile RuO4 escapes. The significant of these results is discussed. (C) 1999 The Electrochemical Society. S0013-4651(98)07-010-4. All rights reserved.

引用

页码：1546 / 1548

页数：3

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