Quantum well state of self-forming 3C-SiC inclusions in 4H SiC determined by ballistic electron emission microscopy -: art. no. 041305

被引：30

作者：

Ding, Y

Park, KB

Pelz, JP

Palle, KC

Mikhov, MK

Skromme, BJ

Meidia, H

Mahajan, S

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[4] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.69.041305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-temperature-processing-induced double-stacking-fault 3C-SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53+/-0.06 eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I-V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

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