Stacking number dependence of size distribution of vertically stacked InAs GaAs quantum dots

被引：12

作者：

Furukawa, Y ^{[1
]}

Noda, S

Ishii, M

Wakahara, A

Sasaki, A

机构：

[1] Kyoto Univ, Kyoto 6068501, Japan

[2] Toyohashi Univ Technol, Toyohashi, Aichi 4418580, Japan

[3] Osaka Electrocommun Univ, Neyagawa, Osaka 5728530, Japan

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 05期

关键词：

InAs GaAs; quantum dots; strain; vertical ordering;

D O I：

10.1007/s11664-999-0095-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertically stacked layer structure is useful for controlling the size distribution of quantum dots. The dependence of the size distribution of quantum dots on the stacking numbers is theoretically and experimentally investigated. We show that the size distribution of quantum dots decreases with increasing the stacking number, and it occurs drastically when the stacking number is changed from 1 to 2. The quantitative analysis on in-plane strain energy distribution is also performed for the explanation.

引用

收藏

页码：452 / 456

页数：5

相关论文

共 18 条

[1] Self-organization processes in MBE-grown quantum dot structures [J].

Bimberg, D ;

Grundmann, M ;

Ledentsov, NN ;

Ruvimov, SS ;

Werner, P ;

Richter, U ;

Heydenreich, J ;

Ustinov, VM ;

Kopev, PS ;

Alferov, ZI .

THIN SOLID FILMS, 1995, 267 (1-2) :32-36

[2]

CHERNOV AA, 1984, SOLID STATE SCI, V36

[3] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J].

KEATING, PN .

PHYSICAL REVIEW, 1966, 145 (02) :637-&

[4] Formation of coherent superdots using metal-organic chemical vapor deposition [J].

Ledentsov, NN ;

Bohrer, J ;

Bimberg, D ;

Kochnev, IV ;

Maximov, MV ;

Kopev, PS ;

Alferov, ZI ;

Kosogov, AO ;

Ruvimov, SS ;

Werner, P ;

Gosele, U .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1095-1097

[5] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[6] ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].

MARTIN, RM .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+

[7] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

[8] CRITICAL THICKNESS OF INAS GROWN ON MISORIENTED GAAS SUBSTRATES [J].

NABETANI, Y ;

WAKAHARA, A ;

SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) :6461-6468

[9] INITIAL GROWTH STAGE AND OPTICAL-PROPERTIES OF A 3-DIMENSIONAL INAS STRUCTURE ON GAAS [J].

NABETANI, Y ;

ISHIKAWA, T ;

NODA, S ;

SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :347-351

[10] AREA DENSITY CONTROL OF QUANTUM-SIZE INGAAS/GA(A1)AS DOTS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

OSHINOWO, J ;

NISHIOKA, M ;

ISHIDA, S ;

ARAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (11B) :L1634-L1637