Influence of dispersive exciton motion on the recombination dynamics in porous silicon

被引：121

作者：

Pavesi, L ^{[1
]}

机构：

[1] UNIV TRENT,DIPARTIMENTO FIS,I-38050 POVO,TRENTO,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.362807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An extended photoluminescence (PL) study of porous silicon is presented. Different PL techniques have been used: continuous wave excited (cw) PL, selectively excited PL, excitation spectroscopy of the PL, time decay of the PL, and time resolved PL. These measurements have been performed on a set of samples of various porosities and at various temperatures. Strong experimental evidence is found for the influence of disorder and of dispersive motion of excitons on the recombination dynamics. The data are interpreted in the framework of the trap-controlled hopping mechanism for the dispersive motion of excitons in a disordered array of Si nanocrystals. (C) 1996 American Institute of Physics.

引用

页码：216 / 225

页数：10

共 31 条

[1] COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLY OXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON
BUSTARRET, E
MIHALCESCU, I
LIGEON, M
ROMESTAIN, R
VIAL, JC
MADEORE, F
[J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 105 - 109
[2] URBACH EDGES IN LIGHT-EMITTING POROUS SILICON AND RELATED MATERIALS
BUSTARRET, E
LIGEON, M
MIHALCESCU, I
OSWALD, J
[J]. THIN SOLID FILMS, 1995, 255 (1-2) : 234 - 237
[3] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON
CALCOTT, PDJ
NASH, KJ
CANHAM, LT
KANE, MJ
BRUMHEAD, D
[J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) : L91 - L98
[4] SPECTROSCOPIC IDENTIFICATION OF THE LUMINESCENCE MECHANISM OF HIGHLY POROUS SILICON
CALCOTT, PDJ
NASH, KJ
CANHAM, LT
KANE, MJ
BRUMHEAD, D
[J]. JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 257 - 269
[5] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
CANHAM, LT
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
[6] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON
CULLIS, AG
CANHAM, LT
[J]. NATURE, 1991, 353 (6342) : 335 - 338
[7] INTERPRETATION OF THE TEMPERATURE-DEPENDENCE OF THE STRONG VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON
FINKBEINER, S
WEBER, J
[J]. THIN SOLID FILMS, 1995, 255 (1-2) : 254 - 257
[8] TIME-RESOLVED SPECTROSCOPY OF VISIBLY EMITTING POROUS SILICON
GAPONENKO, SV
GERMANENKO, IN
PETROV, EP
STUPAK, AP
BONDARENKO, VP
DOROFEEV, AM
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (01) : 85 - 87
[9] HAEGEL NM, 1995, POROUS SILICON, P219
[10] ABSORPTION AND EMISSION OF LIGHT IN NANOSCALE SILICON STRUCTURES
HYBERTSEN, MS
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (10) : 1514 - 1517

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