Ferromagnetic nanoclusters formed by Mn impllantation in GaAs - art. no. 071306

被引：40

作者：

Couto, ODD

Brasil, MJSP

Iikawa, F

Giles, C

Adriano, C

Bortoleto, JRR

Pudenzi, MAA

Gutierrez, HR

Danilov, I

机构：

[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil

[2] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil

[3] Univ Fed Rio Grande do Sul, Dept Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 07期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1063/1.1863436

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferromagnetic clusters were incorporated into GaAs samples by Mn implantation and subsequent annealing. The composition and structural properties of the Mn-based nanoclusters formed at the surface and buried into the GaAs sample were analyzed by x-ray and microscopic techniques. Our measurements indicate the presence of buried MnAs nanoclusters with a structural phase transition around 40degreesC, in accord with the first-order magneto-structural phase transition of bulk MnAs. We discuss the structural behavior of these nanoclusters during their formation and phase transition, which is an important point for technological applications. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 15 条

[1] Finite-cell-gap corrections to the capacitance analysis of liquid crystal displays with periodic interdigital electrodes [J].