Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs:: An x-ray diffraction study -: art. no. 045305

被引：113

作者：

Kaganer, VM ^{[1
]}

Jenichen, B ^{[1
]}

Schippan, F ^{[1
]}

Braun, W ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.66.045305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature-dependent phase coexistence between crystalline phases in heteroepitaxial films of MnAs on GaAs is studied. The epitaxial constraints on the film expansion are analyzed. The x-ray-diffraction data are fitted to a model of periodic elastic domains. The temperature dependencies of phase fractions, the domain sizes, and the misfits are simultaneously obtained. The domain sizes correspond to the minimum of elastic energy, which proves the equilibrium state of the heteroepitaxial system at each temperature.

引用

页码：453051 / 453059

页数：9

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