MBE growth, structure and magnetic properties of MnAs on GaAs on a microscopic scale

被引:36
作者
Däweritz, L [1 ]
Schippan, F [1 ]
Trampert, A [1 ]
Kästner, M [1 ]
Behme, G [1 ]
Wang, ZM [1 ]
Moreno, M [1 ]
Schützendübe, P [1 ]
Ploog, KH [1 ]
机构
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
关键词
interfaces; surfaces; characterization; molecular beam epitaxy; inorganic compounds; magnetic materials;
D O I
10.1016/S0022-0248(01)00897-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Ferromagnetic MnAs layers with abrupt interfaces were grown by MBE on (001) and (311)A oriented GaAs substrates. At low growth rates and As-rich conditions, the films are ((1) over bar 1 0 0) oriented on both templates. For MnAs/GaAs(0 0 1) layers it is demonstrated that realizing a well-ordered reconstructed growth surface and the layer-by-layer growth mode on a thin MnAs buffer, films of high structural quality and very promising magnetic properties are obtained. The quality of thick films is limited by processes accompanying the beta --> alpha MnAs phase transition during sample cooling. The magnetic domains, their increase in size with increasing external magnetic field and their relation to topographical defects was studied by magnetic force microscopy combined with atomic force microscopy. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:834 / 838
页数:5
相关论文
共 15 条
[1]   Strain-mediated phase coexistence in heteroepitaxial films [J].
Kaganer, VM ;
Jenichen, B ;
Schippan, F ;
Braun, W ;
Däweritz, L ;
Ploog, KH .
PHYSICAL REVIEW LETTERS, 2000, 85 (02) :341-344
[2]   Surface reconstructions of MnAs grown on GaAs(001) [J].
Kästner, M ;
Schippan, F ;
Schützendübe, P ;
Däweritz, L ;
Ploog, KH .
SURFACE SCIENCE, 2000, 460 (1-3) :144-152
[3]  
Kittel C., 1986, INTRO SOLID STATE PH
[4]  
MASSALSKI TB, 1990, BINARY ALLOY PHASE D, V1, P293
[5]   Molecular-beam epitaxy of MnAs in the presence of atomic hydrogen [J].
Morishita, Y ;
Iida, K ;
Tsuboi, A ;
Taniguchi, H ;
Sato, K .
JOURNAL OF CRYSTAL GROWTH, 1998, 187 (02) :228-233
[6]   EPITAXY OF DISSIMILAR MATERIALS [J].
PALMSTROM, CJ .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1995, 25 :389-415
[7]   Magnetic structure of epitaxially grown MnAs on GaAs(001) [J].
Schippan, F ;
Behme, G ;
Däweritz, L ;
Ploog, KH ;
Dennis, B ;
Neumann, KU ;
Ziebeck, KRA .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) :2766-2770
[8]   Kinetics of MnAs growth on GaAs(001) and interface structure [J].
Schippan, F ;
Trampert, A ;
Däweritz, L ;
Ploog, KH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (04) :1716-1721
[9]   Growth control of MnAs on GaAs(001) by reflection high-energy electron diffraction [J].
Schippan, F ;
Kästner, M ;
Däweritz, L ;
Ploog, KH .
APPLIED PHYSICS LETTERS, 2000, 76 (07) :834-836
[10]  
SCHIPPAN F, 2000, THESIS HUMBOLDT U BE