Surface reconstructions of MnAs grown on GaAs(001)

被引：14

作者：

Kästner, M ^{[1
]}

Schippan, F ^{[1
]}

Schützendübe, P ^{[1
]}

Däweritz, L ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

SURFACE SCIENCE | 2000年 / 460卷 / 1-3期

关键词：

epitaxy; gallium arsenide; magnetic films; manganese arsenide; metal-semiconductor magnetic heterostructures; reflection spectroscopy; scanning tunneling microscopy; surface relaxation and reconstruction;

D O I：

10.1016/S0039-6028(00)00523-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

During epitaxial growth of MnAs on GaAs(001) by molecular-beam epitaxy (MBE) the surface exhibits various reconstructions depending on the growth conditions. These reconstructions have been studied during growth by reflection high-energy electron diffraction (RHEED) and reflectance difference spectroscopy (RDS). A feature sensitive to the surface structure was identified in the RD spectra. After growth, the (1 x 2) and (1 x 1) reconstructions were cooled down to room temperature and imaged in ultrahigh vacuum with a conventional scanning tunneling microscope (STM). Atomic-scale images of these surfaces are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：144 / 152

页数：9

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