A comprehensive model for bipolar electrical switching of CuTCNQ memories

被引：59

作者：

Billen, J. ^{[1
,2
]}

Steudel, S. ^{[1
]}

Muller, R. ^{[1
]}

Genoe, J. ^{[1
]}

Heremans, P. ^{[1
,2
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept ESAT, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 26期

关键词：

D O I：

10.1063/1.2827590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The generally observed bipolar electrical switching of Cu\CuTCNQ\metal memories (metal=Al,Yb,Ti) between two stable resistance states is shown to occur at the CuTCNQ\metal interface and not in the bulk of CuTCNQ. The switching is explained by a model involving electrochemical formation and dissolution of Cu filaments at the interface. In this mechanism, CuTCNQ acts as solid ionic conductor and source for the Cu+ cations. The model also explains earlier reported findings of bipolar switching in CuTCNQ devices, including the apparently contradictory observation that neutral TCNQ appears in the low-resistance state. (c) 2007 American Institute of Physics.

引用

页数：3

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