Modified Stranski-Krastanov growth in stacked layers of self-assembled islands

被引：164

作者：

Schmidt, OG

Kienzle, O

Hao, Y

Eberl, K

Ernst, F

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[2] Max Planck Inst Met Forsch, D-70174 Stuttgart, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a stack of vertically aligned Stranski-Krastanov grown islands, the critical thickness for planar growth for all but the initial dot layer is reduced, if the thickness of the spacer layer t(s) is smaller than a certain value t(0). We present structural and photoluminescence results on the basis of the extensively studied lattice-mismatched material system Si/Ge. (C) 1999 American Institute of Physics. [S0003-6951(99)04409-5].

引用

页码：1272 / 1274

页数：3

共 16 条

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