Layer-by-Layer Removal of Graphene for Device Patterning

被引:211
作者
Dimiev, Ayrat
Kosynkin, Dmitry V.
Sinitskii, Alexander
Slesarev, Alexander
Sun, Zhengzong
Tour, James M. [1 ]
机构
[1] Rice Univ, Dept Chem, Dept Mech Engn & Mat Sci, Dept Comp Sci, Houston, TX 77005 USA
关键词
RAMAN-SPECTROSCOPY; GRAPHITE OXIDE; FILMS; SHEETS; TRANSPORT; VACANCY; ENERGY; ATOMS;
D O I
10.1126/science.1199183
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The patterning of graphene is useful in fabricating electronic devices, but existing methods do not allow control of the number of layers of graphene that are removed. We show that sputter-coating graphene and graphene-like materials with zinc and dissolving the latter with dilute acid removes one graphene layer and leaves the lower layers intact. The method works with the four different types of graphene and graphene-like materials: graphene oxide, chemically converted graphene, chemical vapor-deposited graphene, and micromechanically cleaved ("clear-tape") graphene. On the basis of our data, the top graphene layer is damaged by the sputtering process, and the acid treatment removes the damaged layer of carbon. When used with predesigned zinc patterns, this method can be viewed as lithography that etches the sample with single-atomic-layer resolution.
引用
收藏
页码:1168 / 1172
页数:5
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