High-mobility organic thin film transistors based on benzothiadiazole-sandwiched dihexylquaterthiophenes

被引：83

作者：

Sonar, Prashant ^{[1
,2
]}

Singh, Sarnarendra P. ^{[1
,2
]}

Sudhakar, Sundarraj ^{[1
,2
]}

Dodabalapur, Ananth ^{[1
,2
,3
]}

Sellinger, Alan ^{[1
,2
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

[2] Inst Mat Res & Engn, ASTAR, Singapore 117602, Singapore

[3] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA

来源：

CHEMISTRY OF MATERIALS | 2008年 / 20卷 / 09期

关键词：

D O I：

10.1021/cm800139q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report here the synthesis, characterization, and organic thin-film transistor (OTFT) mobilities of 4,7-bis(5-(5-hexylthiophen-2-yl)thiophen-2-yl)benzo[1,2,5]thiadiazole (DH-BTZ-4T). DH-BTZ-4T was prepared in one high-yield step from commercially available materials using Suzuki chemistry and purified by column chromatography. OTFTs with hole mobilities of 0.17 cm(2)/(Vs) and on/off current ratios of I x 10(5) were prepared from DH-BTZ-4T active layers deposited by vacuum deposition. As DH-BTZ-4T is soluble in common solvents, solution processed devices were also prepared by spin coating yielding preliminary mobilities of 6.0 x 10(-3) cm(2)/(VS). The promising mobilities and low band gap (1.90 eV) coupled with solution processability and ambient stability makes this material an excellent candidate for application in organic electronics.

引用

页码：3184 / 3190

页数：7

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