Efficient top-gate, ambipolar, light-emitting field-effect transistors based on a green-light-emitting polyfluorene

被引：311

作者：

Zaumseil, Jana ^{[1
]}

Donley, Carrie L. ^{[1
]}

Kim, Ji-Seon ^{[1
]}

Friend, Richard H. ^{[1
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 20期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/adma.200601080

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bright, ambipolar, light-emitting polymer field-effect transistors in a bottom-contact/top-gate structure using poly (9,9-di-n-octylfluorene-altbenzothiadiazole) (F8BT) as a green-emitting semiconductor show balanced hole and electron mobilities, depending on the polymer dielectric. The emission zone, observed as a bright fine in the figure, is well defined and can be moved through the channel.

引用

页码：2708 / +

页数：6

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