Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells

被引：29

作者：

Sun, BQ

Jiang, DS

Pan, Z

Li, LH

Wu, RH

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1334357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of above- and below-band-edge transitions have been investigated by incorporating In atoms into GaNAs/GaAs single quantum wells. The experimental results show that with increasing In concentration the interband luminescence is improved and the luminescence intensity below the band edge in GaInNAs/GaAs decreases significantly. An interpretation is given that N atoms are preferable to form a covalent bond with In than with Ga atoms in a GaInNAs alloy, due to the compensation of the atomic-size difference between In and N atoms on the GaAs substrate. The photoreflectance spectra of the GaInNAs/GaAs single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. (C) 2000 American Institute of Physics. [S0003- 6951(00)01752-6].

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页码：4148 / 4150

页数：3

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共 10 条

[1] Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys [J].

Bellaiche, L ;

Zunger, A .

PHYSICAL REVIEW B, 1998, 57 (08) :4425-4431

[2] Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy [J].

Buyanova, IA ;

Chen, WM ;

Pozina, G ;

Bergman, JP ;

Monemar, B ;

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1999, 75 (04) :501-503

[3] Excitons bound to nitrogen clusters in GaAsN [J].

Francoeur, S ;

Nikishin, SA ;

Jin, C ;

Qiu, Y ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1999, 75 (11) :1538-1540

[4] Luminescence of as-grown and thermally annealed GaAsN/GaAs [J].

Francoeur, S ;

Sivaraman, G ;

Qiu, Y ;

Nikishin, S ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1998, 72 (15) :1857-1859

[5] Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well [J].

Grenouillet, L ;

Bru-Chevallier, C ;

Guillot, G ;

Gilet, P ;

Duvaut, P ;

Vannuffel, C ;

Million, A ;

Chenevas-Paule, A .

APPLIED PHYSICS LETTERS, 2000, 76 (16) :2241-2243

[6] Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy [J].

Li, LH ;

Pan, Z ;

Zhang, W ;

Lin, YW ;

Zhou, ZQ ;

Wu, RH .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :245-248

[7] Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy [J].

Pan, Z ;

Li, LH ;

Zhang, W ;

Lin, YW ;

Wu, RH ;

Ge, W .

APPLIED PHYSICS LETTERS, 2000, 77 (09) :1280-1282

[8] Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures [J].

Sun, BQ ;

Jiang, DS ;

Luo, XD ;

Xu, ZY ;

Pan, Z ;

Li, LH ;

Wu, RH .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2862-2864

[9] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS [J].

VARSHNI, YP .

PHYSICA, 1967, 34 (01) :149-&

[10] GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy [J].

Xin, HP ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2442-2444