C-band linear resistive wide bandgap FET mixers

被引：17

作者：

Andersson, K ^{[1
]}

Desmaris, V ^{[1
]}

Eriksson, J ^{[1
]}

Rorsman, N ^{[1
]}

Zirath, H ^{[1
]}

机构：

[1] Chalmers Univ Technol, Electron Microscopy Lab, S-41296 Gothenburg, Sweden

来源：

2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2003年

关键词：

D O I：

10.1109/MWSYM.2003.1212609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper the performance of two C-band resistive FET mixers are presented and compared. The first mixer uses a SiC-MESFET as a mixing element and the second uses an AlGaN/GaN-HEMT. The mixers have a minimum conversion loss of 7.8 dB and 7.3 dB respectively. The maximum third-order input intercept points are 30 dBm and 36 dBm respectively; for LO drives of 23 dBm and 30 dBm.

引用

页码：1303 / 1306

页数：4

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