Isolated double quantum dot capacitively coupled to a single quantum dot single-electron transistor in silicon

We report electron transport measurements on a single-island single-electron transistor capacitively coupled to an isolated double quantum dot at 4.2 K. The structure is fabricated through trench isolation in silicon-on-insulator. We detect single-electron polarization of the isolated double quantum dot using the single-electron transistor as a sensitive electrometer, and estimate its charging energy. We observe a large suppression of current and modulation of Coulomb blockade peak heights as a function of applied gate voltages. (C) 2003 American Institute of Physics.