Studies on Pd/3C-SiC Schottky junction hydrogen sensors at high temperature

被引：40

作者：

Roy, S ^{[1
]}

Jacob, C ^{[1
]}

Basu, S ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 94卷 / 03期

关键词：

3C-SiC; palladium; Schottky junction; hydrogen sensor; high temperature;

D O I：

10.1016/S0925-4005(03)00380-0

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The sensor response behaviour of the Pd/3C-SiC (epilayer on Si substrate) Schottky junctions was studied at 400degreesC in presence of hydrogen gas with varying concentrations from 500 to 10,000 ppm. The sensitivity, response time and the reversibility were investigated from the transient response characteristics of the sensors. The sensitivity was found to be a function of applied bias across the junction. A gas sensing mechanism has been proposed for these Schottky sensors. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：298 / 303

页数：6

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