Heteroepitaxial growth of 3C-SiC using HMDS by atmospheric CVD

Single crystal cubic silicon carbide (3C-SiC) films have been deposited on carbonized Si(100) substrate using HMDS{Si-2(CH3)(6)} by atmospheric CVD at 1350 degrees C. The HMDS flow rate was 0.5 seem and the carrier gas flow rate was 2.5 sim. The growth rate of the 3C-SiC films was 4.3 mu m h(-1). The HMDS flow rate was important to get a mirror-like surface. The 3C-SiC epilayers on Si(100) were characterized by XRD, Raman scattering, and PL measurement as well as AFM. The 3C-SiC distinct phonons of TO(Gamma) near 796 cm(-1) and LO(Gamma) near 973 +/-1 cm(-1) were recorded by Raman scattering measurement. The PL spectra of CVD 3C-SiC/Si at 11 K from 3.6 to 9.1 mu m included the nitrogen-bound exciter (N-BE) lines, the defect-related W band near 2.15 and 2.13 eV peak corresponding to D-A pair recombination as well as the divacancy-related D1 line at 1.97 eV. The results indicated that the crystallinity of the 3C-SiC films became better with increase of the film thickness. (C) 1999 Elsevier Science S.A. All rights reserved.