RAMAN-SCATTERING OF SIC - ESTIMATION OF THE INTERNAL-STRESS IN 3C-SIC ON SI

被引:76
作者
MUKAIDA, H [1 ]
OKUMURA, H [1 ]
LEE, JH [1 ]
DAIMON, H [1 ]
SAKUMA, E [1 ]
MISAWA, S [1 ]
ENDO, K [1 ]
YOSHIDA, S [1 ]
机构
[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN
关键词
D O I
10.1063/1.339191
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:254 / 257
页数:4
相关论文
共 14 条
[1]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[2]   3C-SIC P-N-JUNCTION DIODES [J].
FURUKAWA, K ;
UEMOTO, A ;
SHIGETA, M ;
SUZUKI, A ;
NAKAJIMA, S .
APPLIED PHYSICS LETTERS, 1986, 48 (22) :1536-1537
[3]   RAMAN-SCATTERING IN GASB-ALSB STRAINED LAYER SUPERLATTICES [J].
JUSSERAND, B ;
VOISIN, P ;
VOOS, M ;
CHANG, LL ;
MENDEZ, EE ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1985, 46 (07) :678-680
[4]  
KAKIMOTO K, 1982, APPL PHYS LETT, V40, P826, DOI 10.1063/1.93281
[5]  
KOBAYASHI Y, 1982, APPL PHYS LETT, V40, P1041
[6]   EXPERIMENTAL 3C-SIC MOSFET [J].
KONDO, Y ;
TAKAHASHI, T ;
ISHII, K ;
HAYASHI, Y ;
SAKUMA, E ;
MISAWA, S ;
DAIMON, H ;
YAMANAKA, M ;
YOSHIDA, S .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :404-406
[7]   THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES [J].
LIAW, HP ;
DAVIS, RF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :3014-3018
[8]   GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].
NELSON, WE ;
HALDEN, FA ;
ROSENGREEN, A .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+
[9]   PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].
NISHINO, S ;
POWELL, JA ;
WILL, HA .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462
[10]   RAMAN-SCATTERING OF SIC - APPLICATION TO THE IDENTIFICATION OF HETEROEPITAXY OF SIC POLYTYPES [J].
OKUMURA, H ;
SAKUMA, E ;
LEE, JH ;
MUKAIDA, H ;
MISAWA, S ;
ENDO, K ;
YOSHIDA, S .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) :1134-1136