CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS ON TITANIUM CARBIDE, USING 1,3 DISILACYCLOBUTANE

被引：12

作者：

CHADDHA, AK ^{[1
]}

PARSONS, JD ^{[1
]}

WU, J ^{[1
]}

CHEN, HS ^{[1
]}

ROBERTS, DA ^{[1
]}

HOCKENHULL, H ^{[1
]}

机构：

[1] SCHUMACHER,CARLSBAD,CA 92009

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon carbide (SiC) thin films were deposited on titanium carbide (TiC) substrates by pyrolysis of 1,3 disilacyclobutane (C2H8Si2), at atmospheric pressure, in an inverted-vertical cold-wall chemical vapor deposition reactor. The growth rate, morphology, and crystallinity of the films were studied, at constant C2H8Si2 flow rate, as a function of substrate temperature (810-degrees-C less-than-or-equal-to T(s) less-than-or-equal-to 1285-degrees-C). The growth rate increased with increasing T(s). Film morphologies were dependent on T(s) and slight differences in TiC substrate orientation at T(s) greater-than-or-equal-to 1015-degrees-C. A smooth, soft as-grown morphology was obtained at 810-degrees-C. Hard, rough as-grown surfaces were obtained at T(s) greater-than-or-equal-to 1066-degrees-C. Films grown at T(s) greater-than-or-equal-to 1066-degrees-C contained a SiC primary phase and a Si-rich second phase. Epitaxial growth of beta-SiC was obtained only at 1210-degrees-C.

引用

页码：3097 / 3098

页数：2

共 8 条

[1] KINETICS AND MECHANISM OF PYROLYSIS OF 1,3-DISILACYCLOBUTANE, "1,3-DIMETHYL-1,3-DISILACYCLOBUTANE, AND 1,1,3,3-TETRAMETHYL-1,3-DISILACYCLOBUTANE IN THE GAS-PHASE [J].