EPITAXIAL-GROWTH AND ELECTRIC CHARACTERISTICS OF CUBIC SIC ON SILICON

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] CARTER CH, 1985, MATERIALS RES SOC M

[3] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2361 - 2369

[4] JACKSON DM, 1965, T METALL SOC AIME, V223, P488

[5] VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 138 - 140

[6] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[7] LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[8] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[10] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] CARTER CH, 1985, MATERIALS RES SOC M

[3] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2361 - 2369

[4] JACKSON DM, 1965, T METALL SOC AIME, V223, P488

[5] VAPOR-PHASE DEPOSITION OF BETA-SILICON CARBIDE ON SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 138 - 140

[6] Lely A, 1955, BER DEUT KERAM GES, V8, P229

[7] LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[8] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[9] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[10] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680